Power Semiconductor Devices
Power Semiconductor Devices
The research activities on power semiconductor devices span three main areas: (1) experiment and characterization, (2) analysis and design via TCAD simulations, and (3) the development of compact circuit models for power devices.
(1) Characterization of Power Semiconductor Devices
Our laboratory is strongly focused on experimental characterization, developing in-house test circuits specifically tailored to the needs of the devices under test. We assess numerous parameters and performance indicators for power semiconductor devices, evaluating their performance under both standard (within the SOA) and abnormal (out of the SOA) operating conditions. Our team has developed multiple test benches for standard characterizations, such as isothermal pulsed static characteristics, along with reliability testing for unclamped inductive switching [1], short-circuit, and forward surge current. We have successfully analyzed a wide range of power devices, including Si power diodes [2], Si IGBTs (both planar and trench), Si MOSFETs [3], SiC MOSFETs [4], and GaN HEMTs [5].
[1] L. Rossi, M. Riccio, E. Napoli, A. Irace, G. Breglio, and P. Spirito, “A novel UIS test system with Crowbar feedback for reduced failure energy in power devices testing,” Microelectronics Reliability, vol. 50, no. 9–11, pp. 1479–1483, Sep. 2010, doi: 10.1016/j.microrel.2010.07.080.
[2] M. Riccio, A. Irace, and G. Breglio, “Lock-in thermography for the localization of prebreakdown leakage current on power diodes,” in 2009 Ph.D. Research in Microelectronics and Electronics, Cork, Ireland: IEEE, Jul. 2009, pp. 208–211. doi: 10.1109/RME.2009.5201357.
[3] A. Irace, G. Breglio, P. Spirito, R. Letor, and S. Russo, “Reliability enhancement with the aid of transient infrared thermal analysis of smart Power MOSFETs during short circuit operation,” Microelectronics Reliability, vol. 45, no. 9–11, pp. 1706–1710, Sep. 2005, doi: 10.1016/j.microrel.2005.07.087.
[4] G. Romano et al., “A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs,” IEEE J. Emerg. Sel. Topics Power Electron., vol. 4, no. 3, pp. 978–987, Sep. 2016, doi: 10.1109/JESTPE.2016.2563220.
[5] M. Riccio, G. Romano, L. Maresca, G. Breglio, A. Irace, and G. Longobardi, “Short circuit robustness analysis of new generation Enhancement-mode p-GaN power HEMTs,” in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL: IEEE, May 2018, pp. 104–107. doi: 10.1109/ISPSD.2018.8393613.
(2) TCAD Simulation and Semiconductor Device Design
Technology Computer-Aided Design (TCAD) simulations are advanced, physics-based simulations used by both industry and academia to model and analyze semiconductor devices’ internal structure and behavior. In power semiconductor research, TCAD tools simulate physical processes within devices, such as current flow, electric field distribution, thermal effects, and breakdown behavior. These simulations provide deep insights into device performance under various conditions, allowing for detailed evaluations without the need for physical prototypes. The OptoPowerLab has extensive expertise in semiconductor TCAD simulation and relies on it to develop new power device concepts [1-3] and to gain insights into the physical mechanisms occurring within devices [4, 5].
[1] L. Maresca et al., “Novel Cathode Design to Improve the ESD Capability of 600 V Fast Recovery Epitaxial Diodes,” Energies, vol. 11, no. 4, p. 832, Apr. 2018, doi: 10.3390/en11040832.
[2] L. Maresca et al., “SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation through Advanced TCAD Simulations,” SSP, vol. 360, pp. 75–80, Aug. 2024, doi: 10.4028/p-lhRi4M.
[3] C. Scognamillo et al., “TCAD-Based Investigation of a 3.3 kV Planar SiC MOSFET: BV-R ON Trade-Off Optimization,” in 2024 IEEE 18th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG), Gdynia, Poland: IEEE, Jun. 2024, pp. 1–4. doi: 10.1109/CPE-POWERENG60842.2024.10604369.
[4] G. Romano et al., “Influence of design parameters on the short-circuit ruggedness of SiC power MOSFETs,” in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Prague, Czech Republic: IEEE, Jun. 2016, pp. 47–50. doi: 10.1109/ISPSD.2016.7520774.
[5] M. Riccio, G. Romano, L. Maresca, G. Breglio, A. Irace, and G. Longobardi, “Short circuit robustness analysis of new generation Enhancement-mode p-GaN power HEMTs,” in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL: IEEE, May 2018, pp. 104–107. doi: 10.1109/ISPSD.2018.8393613.
(3) Compact circuit modelling
The research chain concludes with compact modeling. Specifically, the OptoPowerLab has actively developed electrothermal SPICE models of power devices. Unlike standard SPICE models, which focus solely on electrical characteristics, electrothermal models incorporate self-heating effects—where heat generated from power dissipation influences electrical properties through thermal feedback. This is particularly important for power semiconductor devices, which are responsible for significant energy transfer. The OptoPowerLab has presented several compact models that describe unique device phenomena [1-3] and support thermally-aware circuit design [4-6].
[1] M. Riccio, M. Carli, L. Rossi, A. Irace, G. Breglio, and P. Spirito, “Compact electro-thermal modeling and simulation of large area multicellular Trench-IGBT,” in 2010 27th International Conference on Microelectronics Proceedings, Nis, Serbia: IEEE, 2010, pp. 379–382. doi: 10.1109/MIEL.2010.5490459.
[2] M. Riccio, V. D Alessandro, G. Romano, L. Maresca, G. Breglio, and A. Irace, “A Temperature-Dependent SPICE Model of SiC Power MOSFETs for Within and Out-of-SOA Simulations,” IEEE Trans. Power Electron., vol. 33, no. 9, pp. 8020–8029, Sep. 2018, doi: 10.1109/TPEL.2017.2774764.
[3] V. Terracciano, A. Borghese, M. Boccarossa, V. d’Alessandro, and A. Irace, “A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism,” SSP, vol. 360, pp. 67–74, Aug. 2024, doi: 10.4028/p-b9ImzL.
[4] M. Riccio et al., “3D electro-thermal simulations of wide area power devices operating in avalanche condition,” Microelectronics Reliability, vol. 52, no. 9–10, pp. 2385–2390, Sep. 2012, doi: 10.1016/j.microrel.2012.06.133.
[5] D. Cavaiuolo et al., “A robust electro-thermal IGBT SPICE model: Application to short-circuit protection circuit design,” Microelectronics Reliability, vol. 55, no. 9–10, pp. 1971–1975, Aug. 2015, doi: 10.1016/j.microrel.2015.06.086.
[6] A. Borghese et al., “Statistical Analysis of the Electrothermal Imbalances of Mismatched Parallel SiC Power MOSFETs,” IEEE J. Emerg. Sel. Topics Power Electron., vol. 7, no. 3, pp. 1527–1538, Sep. 2019, doi: 10.1109/JESTPE.2019.2924735.
